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| FDD8445 N-Channel PowerTrench(R) MOSFET March 2007 FDD8445 N-Channel PowerTrench(R) MOSFET tm 40V, 50A, 8.7m Features RDS(ON) = 6.7 m (Typ), VGS = 10V, ID=50A Qg(10) = 45nC (Typ), VGS=10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse/ Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant A REE I DF Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Transmission Distributed Power Architecture and VRMs Primary Switch for 12V Systems M ENTATIO LE N MP LE D G S (c)2007 Fairchild Semiconductor Corporation FDD8445 Rev A (W) 1 www.fairchildsemi.com FDD8445 N-Channel PowerTrench(R) MOSFET Absolute Maximum Ratings Tc = 25C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Continuous (VGS=10v,with RJA = 52oC/W) Pulsed Single Pulse Avalanche Energy (Note 2) Power Dissipation Derate above 25oC Operating and Storage Temperature Drain Current Continuous (VGS=10v) (Note 1) Ratings 40 20 70 15.2 Figure 4 144 79 0.53 -55 to +175 mJ W W/oC o Units V V A A C Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TO-252, lin2 copper pad area 1.9 52 oC/W oC/W Package Marking and Ordering Information Device Marking FDD8445 Device FDD8445 Package TO-252AA Reel Size 13" Tape Width 12mm Quantity 2500 units Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V VDS = 32V VGS = 0V VGS = 20V TJ=150C 40 1 250 100 nA V A On Characteristics VGS(th) RDS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance VDS = VGS, ID = 250A ID = 50A, VGS = 10V ID = 50A, VGS = 10V, TJ = 175C 2 2.8 6.7 12.5 4 8.7 16.3 m V Dynamic Characteristics CISS COSS CRSS RG Qg(TOT) Qg(5) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge VDS = 25V, VGS = 0V, f = 1MHz f = 1MHz VGS = 0 to 10V VGS = 0 to 5V VGS = 0 to 2V VDD = 20V, ID = 50A 3040 295 178 1.7 45 17 5.8 12.5 9.5 10.5 4050 390 270 59 22 7.6 pF pF pF nC nC nC nC nC nC FDD8445 Rev A (W) 2 www.fairchildsemi.com FDD8445 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t(on) td(on) tr td(off) tf toff Turn-On Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-Off Time VDD = 20V, ID = 50A VGS = 10V, RGS = 2 10 82 26 9.6 138 53 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD=50A ISD=25A IF= 50A, dIF/dt=100A/s IF= 50A, dIF/dt=100A/s 1.25 1.0 39 38 V V ns nC Notes: 1: Maximum package current capability is 50A. 2: Starting TJ = 25oC, L=0.18mH, IAS=40A. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDD8445 Rev A (W) 3 www.fairchildsemi.com FDD8445 N-Channel PowerTrench(R) MOSFET Typical Characteristics 1.2 POWER DISSIPATION MULTIPLIER 80 VGS=10V CURRENT LIMITED BY PACKAGE 1.0 0.8 0.6 0.4 0.2 0.0 0 25 ID, DRAIN CURRENT (A) 60 40 20 0 25 50 75 100 125 o 150 175 TC , CASE TEMPERATURE( C) 50 75 100 125 o TC, CASE TEMPERATURE( C) 150 175 Figure 1. Normalized Power Dissipation vs Case Temperature 2 1 NORMALIZED THERMAL IMPEDANCE, ZJC DUTY CYCLE - DESCENDING ORDER Figure 2. Maximum Continuous Drain Current vs Case Temperature 0.1 D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 0.01 -5 10 SINGLE PULSE 10 -4 10 10 10 t, RECTANGULAR PULSE DURATION(s) -3 -2 -1 10 0 10 1 Figure 3. Normalized Maximum Transient Thermal Impedance 2000 1000 IDM, PEAK CURRENT (A) VGS = 10V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150 100 10 -5 10 SINGLE PULSE 10 -4 10 10 10 t, RECTANGULAR PULSE DURATION(s) -3 -2 -1 10 0 10 1 Figure 4. Peak Current Capability FDD8445 Rev A (W) 4 www.fairchildsemi.com FDD8445 N-Channel PowerTrench(R) MOSFET Typical Characteristics 1000 10us 200 IAS, AVALANCHE CURRENT (A) 100 ID, DRAIN CURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 100us 10 CURRENT LIMITED BY PACKAGE 10 STARTING TJ = 150 C O STARTING TJ = 25 C O 1 1ms 0.1 1 OPERATION IN THIS SINGLE PULSE AREA MAY BE TJ = MAX RATED LIMITED BY rDS(ON) TC = 25oC 10ms DC 10 100 1 0.01 VDS, DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) 1000 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Indutive Switching Capability 140 120 100 80 60 40 20 0 2.0 TJ = 25 C TJ = - 55 C O O 120 PULSE DURATION=80s DUTY CYCLE=0.5% MAX VDD = 6V TJ = 175 C O ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 80 60 40 20 0 0.0 VGS=10V 5.0V PULSE DURATION =80S DUTY CYCLE =0.5% MAX 4.5V 4.0V 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VGS, GATE TO SOURCE VOLTAGE (V) 6.0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 3.0 Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics 20 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.0 RDS(ON), DRAIN TO SOURCE ON-RESISTANCE (m ) PULSE DURATION=80S DUTY CYCLE=0.5%MAX ID=12A 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -80 PULSE DURATION =80S DUTY CYCLE =0.5% MAX 16 TJ = 175oC 12 8 TJ = 25oC ID = 50A VGS = 10V 4 3.5 4.5 6.0 7.5 9.0 VGS, GATE TO SOURCE VOLTAGE (V) 10 -40 0 40 80 120 o 160 200 TJ, JUNCTION TEMPERATURE( C) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDD8445 Rev A (W) 5 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature www.fairchildsemi.com FDD8445 N-Channel PowerTrench(R) MOSFET Typical Characteristics 1.2 1.1 NORMALIZED GATE THRESHOLD VOLTAGE 1.10 ID =250A NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS=VDS ID =250A 1.0 0.9 0.8 0.7 0.6 0.5 -80 -40 0 40 80 120 160 o TJ, JUNCTION TEMPERATURE ( C) 200 1.05 1.00 0.95 0.90 -80 -40 0 40 80 120 160 o TJ, JUNCTION TEMPERATURE ( C) 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 10000 CISS Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10 VGS, GATE TO SOURCE VOLTAGE(V) f = 1MHz VGS = 0V ID=50A VDD=15V VDD=20V 8 CAPACITANCE (pF) VDD=25V 6 1000 COSS 4 CRSS 2 100 0.1 0 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 0 20 40 Qg , GATE CHARGE (nC) 60 Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge vs Gate to Source Voltage FDD8445 Rev A (W) 6 www.fairchildsemi.com FDD8445 N-Channel PowerTrench(R) MOSFET tm TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Across the board. Around the world.TM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM E2CMOSTM EcoSPARK(R) EnSignaTM FACT Quiet SeriesTM FACT(R) FAST(R) FASTrTM FPSTM FRFET(R) GlobalOptoisolatorTM GTOTM HiSeCTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM MICROCOUPLERTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANAR(R) PACMANTM POPTM Power220(R) Power247(R) PowerEdgeTM PowerSaverTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ScalarPumpTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM The Power Franchise(R) TM TinyBoostTM TinyBuckTM tm TinyLogic(R) TINYOPTOTM TinyPowerTM TinyWireTM TruTranslationTM SerDesTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I24 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD8445 Rev A (W) 7 www.fairchildsemi.com |
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